Chinese translation for "cmos device"

互补金属氧化物半导体元件

Related Translations:

cmos:  互补金属氧化物半导体存储器互补金属氧化物半导体工艺互补式金属-氧化层-半导体互补型金属氧化半导体逻辑相补型金属酸化物半导体帧校准器中的设置不一致

cmos power:  互补金属氧化半导体电力

cmos circuits:  互补金属氧化半导体电路

cmos inverter:  cmos倒相器

cmos process:  cmos工艺

cmos structure:  互补金氧半导体结构

cmos converters:  互补金属氧化半导体倒换器

bipolar cmos:  双极型互补金属氧化物半导体, 双极型cmos

cmos chip:  cmos芯片

dynamic cmos:  动态互补金氧半导体

Example Sentences:

	1.	Development of cmos devices and circuits with sub - 0 . 1 m gate length 新型高频硅光电负阻器件的特性模拟及测试分析
	2.	In this paper , ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices . with the size of devices scaling , ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process 随着器件尺寸的进一步缩减，与传统的ti 、 co自对准硅化物相比， ni自对准硅化物更能适用于cmos器件对硅化物的要求。
	3.	We have demonstrated that the integrated circuit test structures fabricated at standard commercial foundries can be radiation tolerant at total does greater than 100krad ( si ) . the radiation environment of outer space is capable of effecting cmos devices in three ways 外太空辐射环境主要以三种方式影响cmos器件：总剂量辐射效应( tid ) ，单粒子翻转效应( seu )和单粒子闩锁效应( sel ) 。
	4.	As the technology entered the era of deep - submicron ( dsm ) technologies , the second order effects of cmos device are having more and more influence on the performance of the cmos logic circuits . this dissertation compared the performance of four popular logic families against mcml under dsm technology 随着工艺发展进入深亚微米时代， cmos器件的二阶效应对电路的性能产生着越来越重要的影响，论文首先对比讨论了mcml电路和其它各种常用逻辑电路在采用深亚微米器件时的性能表现。

Similar Words：

"cmos circuits" Chinese translation, "cmos cmos" Chinese translation, "cmos complementary metal oxide silicon" Chinese translation, "cmos contamination" Chinese translation, "cmos converters" Chinese translation, "cmos devices" Chinese translation, "cmos display type mismatch" Chinese translation, "cmos gate" Chinese translation, "cmos image sensor" Chinese translation, "cmos integrated circuit" Chinese translation